 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES * RDS(ON), VGS@10V,IDS@30A=6m * RDS(ON), VGS@4.5V,IDS@30A=9m * Advanced trench process technology * High Density Cell Design For Uitra Low On-Resistance * Specially Designed for DC/DC Converters and Motor Drivers * Fully Characterized Avalanche Voltage and Current * Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA * Case: TO-252 Molded Plastic * Terminals : Solderable per MIL-STD-750,Method 2026 * Marking : 06N03 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l VD S VGS ID ID M TA = 2 5 O C TA = 7 5 O C PD TJ , TS T G EAS RJ C RJ A Li mi t 25 +20 60 280 6 2 .5 3 7 .5 -5 5 to + 1 5 0 180 2 .0 50 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=27A, VDD=25V, L=0.5mH Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2 C mJ O C /W C /W O Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUL.19.2006 PAGE . 1 PJD06N03 ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance Dynamic V D S = 1 5 V , ID = 1 5 A , V G S = 5 V To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a n c e S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is VSD IS = 3 0 A , V G S = 0 V 0 .9 60 1 .2 A V Qg s Qg d Td ( o n ) trr td (o ff) tf Ciss Coss C rs s V D S =1 5 V, V G S =0 V f=1 .0 MHZ VD D =15V , RL =15 ID =1A , VG E N =10V RG =3.6 V D S = 1 5 V , ID = 1 5 A V G S =10V 3 8 .2 4 .8 9 .5 11.5 11.0 43 1 7 .5 1750 480 310 nC 16 18 ns 60 25 pF 2 1 .8 BVD SS V G S (th) RD S (o n) RD S (o n) ID S S IG S S g fS V G S = 0 V , ID = 2 5 0 u A V D S = V G S , ID = 2 5 0 u A VG S =4.5V, ID =30A VG S =10V, ID =30A VD S =25V, VG S =0V V G S =+2 0 V, V D S =0 V V D S = 1 0 V , ID = 1 5 A 25 1 30 7 .5 5.0 3 9 .0 m 6.0 1 +100 uA nA S V V S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s Switching Test Circuit VIN VDD RL VOUT Gate Charge Test Circuit VGS VDD RL RG 1mA RG STAD-JUL.19.2006 PAGE . 2 PJD06N03 Typical Characteristics Curves (TA=25 C,unless otherwise noted) O ID - Drain-to-Source Current (A) 100 80 VGS=10V, 6.0V, 5.0V, 4.5V, 4.0V 80 ID - Drain Source Current (A) V DS=10V 3.5V 60 60 40 T J=125 C O 40 3.0V 20 20 T J=25 C O 2.5V 0 T J=-55 C O 0 0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5 V GS - Gate-to-Source Voltage (V) V DS - Drain-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic FIG.2- Transfer Characteristic 15 30 R DS(ON) - On-Resistance (m W ) R DS(ON) - On-Resistance (m W ) I D=30A 12 9 6 3 0 0 10 20 30 40 50 60 70 80 90 ID - Drain Current (A) 25 20 15 10 5 0 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) V GS=4.5V V GS=10V T J=125 OC T J=25 OC FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance (Normalized) 1.4 1.3 V GS=10V I D=30A 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o 125 150 TJ - Junction Tem perature ( C) FIG.5- On Resistance vs Junction Temperature STAD-JUL.19.2006 PAGE . 3 PJD06N03 VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 Qg - Gate Charge (nC) Vgs Qg V DS=15V I D=15A Vgs(th) Qsw Qg(th) Qgs Qgd Qg Fig.6 - Gate Charge Waveform 29 BVDSS - Breakdown Voltage (V) Fig.7 - Gate Charge Vth - G-S Threshold Voltage (NORMALIZED) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 I D=250uA I D=250uA 28 27 26 -25 0 25 50 75 100 125 150 25 -50 -25 0 25 50 75 100 125 150 TJ - Junction Tem perature (oC) TJ - Junction Temperature (oC) Fig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction Temperature 100 IS - Source Current (A) V GS=0V 10 1 T J=125 OC T J=25 OC T J=-55 OC 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage LEGALSTATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUL.19.2006 PAGE . 4 |
Price & Availability of PJD03N03
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |